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Graphene Electronic Devices: Transistor vs. Barristor
New Physics: Sae Mulli 2016; 66: 1201~1209
Published online October 31, 2016;
© 2016 New Physics: Sae Mulli.

Sung Ho JHANG, Nae Bong JEONG, Do-Hyun PARK, Hyun-Jong CHUNG*

Department of Phyics, Konkuk University, Seoul 05029, Korea
Correspondence to:
Received September 6, 2016; Revised September 13, 2016; Accepted September 19, 2016.
cc This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License ( which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Recently, graphene has been intensively studied as a channel material for use in electronic devices. In this article, research on graphene field-effect transistors (GFETs) for RF amplification and on efforts to switch off graphene electronic devices, including graphene barristors (GBs) are reviewed. The novel switching mechanism of a GB is compared with those of Si field-effect transistor (SiFET) and a GFET. From the relation between the accumulated charge and the workfunction of the channel, we found that while the GFET modulates the carrier density to exhibit an $I_{ON}/I_{OFF}\sim10$, the GB and the SiFET modilate barrier height to achieve an $I_{ON}/I_{OFF}>10^5$. In addition, other unique features of a GB as an electronic device are discussed.     
PACS numbers: 85.35.-p, 72.80.Vp, 73.63.-b
Keywords: Graphene, Graphene transistor, Graphene barristor, Van der Waals heterostructure

November 2017, 67 (11)
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