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Atomic Arrangements and Orientations of Aligned Gallium-Nitride Nanoneedles Grown by Using Hydride Vapor Phase Epitaxy
New Physics: Sae Mulli 2017; 67: 30~35
Published online January 31, 2017;
© 2017 New Physics: Sae Mulli.

Ha Young LEE1, Injun JEON1, Ji-yeon NOH1, Kyung-won LIM1, Hyung Soo AHN1, Sam Nyung YI*1, Keesam SHIN2, Hunsoo JEON3, Min Jeong SHIN4, Young Moon YU5

1 Department of Electronic Materials Engineering, Korea Maritime and Ocean University, Busan 49112, Korea
2 Division of Metallurgy and Materials Engineering, Changwon National University, Changwon 51140, Korea
3 Compound Semiconductor Fabrication Technology Center, Korea Maritime and Ocean University, Busan 49112, Korea
4 RF Convergence Components Research Section, ICT Materials & Components Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), Daejeon 34129, Korea
5 LED-Marine Convergence Technology R&BD Center, Pukyong National University, Busan 48513, Korea
Correspondence to:
Received August 26, 2016; Revised October 10, 2016; Accepted October 11, 2016.
cc This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License ( which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Low-dimensional GaN nanoneedles were grown on GaN/Si(111) by using HVPE (hydride vapor phase epitaxy), and the initial growth morphologies were analyzed. The nanoneedles were grown with a HCl:NH$_3$ gas flow ratio of 1:38 at 600 $^\circ$C for 5, 10, and 60 min. The atomic arrangements and the orientational relationships between the substrate and the GaN nanoneedles were investigated by using FE-SEM (field-emission scanning electron microscopy), HR-TEM (high-resolution transmission electron microscopy), and X-ray pole figure measurements. For the sample grown for 10 min, most of the nanoneedles were grown in the [0001] direction along the growth axis with single-crystalline structures, but a few GaN nanoneedles were partially tilted. Vertically-aligned Growth is known to depend on the roughness of the substrate, the uniformity of the gas flow, and the temperature. Among them, we observed that the tilting was caused by the roughness of the substrate.
PACS numbers: 81.05.Ea, 81.07.Gf, 81.10.Bk
Keywords: GaN, Nanoneedles, HVPE, Pole figures

August 2017, 67 (8)