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https://doi.org/10.3938/NPSM.67.1058
Effect of Mixed Ga Metal for AlN Growth by Using Hydride Vapor-Phase Epitaxy
New Physics: Sae Mulli 2017; 67: 1058~1065
Published online September 29, 2017;  https://doi.org/10.3938/NPSM.67.1058
© 2017 New Physics: Sae Mulli.

Injun JEON1, Sung Geun BAE1, Min YANG1, Sam Nyung YI1, Hyung Soo AHN*1, Hunsoo JEON†1,2, Kyoung Hwa KIM1,2, Jae Hak LEE1,3, Suck-Whan KIM‡4

1 Department of Electronic Material Engineering, Korea Maritime and Ocean University, Busan 49112, Korea
2 Compound Semiconductor Fabrication Technology Center, Korea Maritime and Ocean University, Busan 49112, Korea 
3 Power Semiconductor Center, Busan Techno Park, Busan 46239, Korea
4 Department of Physics, Andong National University, Andong 36729, Korea 
Correspondence to:
*ahnhs@kmou.ac.kr, †hunsoojeon@gmail.com, ‡swkim@anu.ac.kr
Received July 19, 2017; Revised August 23, 2017; Accepted August 25, 2017.
cc This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract
The effect of Ga metal mixed with Al metal was investigated in the source zone for the growth of AlN epilayers by using a mixed-source HVPE (hydride vapor phase epitaxy). A mixed source with Al metal and a little Ga metal was used as source materials for the growth of AlN epilayers, and it was heated to 700 $^\circ$C by using an RF heating coil. When only Al metal was used as source materials, nitridation occurred on the surface of the Al source when the source temperature was high, which prevented the Al from reacting with HCl. When Al+Ga mixed metal was used as source materials, nitridation of the Al metal was prevented due to the presence of the mixed Ga metal, and AlN epilayers were grown by using Al+Ga mixed-source HVPE in a nitrogen atmosphere.
Keywords: Mixed-source, HVPE, AlN, Power electronics, III-V semiconductor


September 2017, 67 (9)