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https://doi.org/10.3938/NPSM.67.1066
Structural and Electrical Characteristics of Mg-doped ZnO Nanorods Grown on a PES Substrate by Using Hydrothermal Methods
New Physics: Sae Mulli 2017; 67: 1066~1071
Published online September 29, 2017;  https://doi.org/10.3938/NPSM.67.1066
© 2017 New Physics: Sae Mulli.

Jae-Hyeon OH1, Se-Hyeon PARK1, Nakwon JANG*1, Hong-Seung KIM2

1 Electrical and Electronics Engineering, Korea Maritime and Ocean University, Busan 49112, Korea
2 Electronic Material Engineering, Korea Maritime and Ocean University, Busan 49112, Korea
Correspondence to: nwjang@kmou.ac.kr
Received August 16, 2017; Revised August 24, 2017; Accepted August 25, 2017.
cc This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract
For the fabrication of a wearable flexible ultraviolet photodetector device, Mg-doped ZnO was studied. MgZnO nanorods were grown using the hydrothermal synthesis method, which can grow MgZnO at low temperature on a polyether sulfone (PES) substrate. The MgZnO nanorods showed a crystal structure in which hexagonal MgZnO and cubic MgZnO were mixed as Mg was doped. The MgZnO nanorods doped with 3 at% Mg showed the best crystallinity, and the sheet resistance value was 76 $\Omega/$□. An ultraviolet (UV) photodetector fabricated using the MgZnO nanorods had a maximum current of 1.9 $\mu$A at a 1 V applied voltage in a UV irradiation environment, a rise time of 21 seconds, a decay time of 17 seconds, and an on/off current ratio value of 1.96 $\times$ 10$^2$.
PACS numbers: 81.05.Dz, 61.46.Km, 81.07.-b, 73.61.Ga
Keywords: MgZnO, Nanorod, Flexible device, Hydrothermal methods, Photodetector


September 2017, 67 (9)