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Growth of $\beta$-Ga$_2$O$_3$ Thin Films by Using Metal-Organic Chemical Vapor Deposition and Their Photocurrent Characteristics
New Physics: Sae Mulli 2017; 67: 1162~1167
Published online October 31, 2017;
© 2017 New Physics: Sae Mulli.

Seo Young LEE1, Hyung Soo AHN1, Min YANG*1, Young Moon YU2

1 Department of Electronic Material Engineering, Korea Maritime and Ocean University, Busan 49112, Korea
2 LED-Marine Convergence Technology R&BD Center, Pukyong National University, Busan 48547, Korea
Correspondence to:
Received July 14, 2017; Revised August 28, 2017; Accepted August 28, 2017.
cc This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License ( which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
The characteristics of Schottky diodes fabricated with $\beta$-Ga$_2$O$_3$ thin films grown by using metal-organic chemical vapor deposition (MOCVD) at different growth temperatures were studied. Thin films grown at 600 $^\circ$C and 900 $^\circ$C had quite different surface roughnesses. The surface morphology of the film grown at 600 $^\circ$C was very smooth while that of the film grown at 900 $^\circ$C showed a rough surface with large polycrystalline grains. The current-voltage characteristics of the Schottky diodes fabricated with those thin films and Ti/Au metal electrodes were evaluated. The film grown at 600 $^\circ$C, which had a smooth surface, had a lower cut-in voltage and dark current compared to the film grown at 900 $^\circ$C. Accordingly, the electrical properties of the Schottky diodes were highly affected by the surface roughness and the oxidization during growth. Also, photocurrent generation and carrier diffusion were analyzed using metal patterns that allowed various areas of the thin films to be exposed to light. 
PACS numbers:, 81.15.Gh, 85.60.Bt
Keywords: $\beta$-Ga$_2$O$_3$, MOCVD, Crystal growth, Photocurrent

October 2019, 69 (10)
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