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https://doi.org/10.3938/NPSM.67.1272
Electrical and Ferroelectric Properties of Rare-earth-doped Na$_{0.5}$Bi$_{4.0}RE_{0.5}$Ti$_4$O$_{15}$ ($RE$ = Eu, Gd and Dy) Thin Films
New Phys.: Sae Mulli 2017; 67: 1272~1278
Published online November 30, 2017;  https://doi.org/10.3938/NPSM.67.1272
© 2017 New Physics: Sae Mulli.

Min Hwan KWAK1, Chinnambedu Murugesan RAGHAVAN2, Sang Su KIM2, Won-Jeong KIM*2

1 Department of Electrical Engineering, Changwon Moonsung University, Changwon 51410, Korea 
2 Department of Physics, Changwon National University, Changwon 51140, Korea
Correspondence to: kwj@changwon.ac.kr
Received September 22, 2017; Revised October 16, 2017; Accepted October 16, 2017.
cc This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract
A study of the structural, electrical and ferroelectric properties of layered Aurivillius-type Na$_{0.5}$Bi$_{4.5}$Ti$_4$O$_{15}$ (NaBTi) and Na$_{0.5}$Bi$_{4.0}RE_{0.5}$Ti$_4$O$_{15}$ ($RE$ = Eu, Gd and Dy) thin films is reported. These films were fabricated on Pt-coated Si(100) substrates by using a chemical solution deposition method followed by a heat treatment. The rare-earth elements used as dopants, such as Eu, Gd and Dy, were found to be effective in improving the leakage current densities and the ferroelectric properties of the layered Na$_{0.5}$Bi$_{4.5}$Ti$_4$O$_{15}$ thin films without affecting their original Aurivillius structures. Based on the measured ferroelectric polarization-electric field ($P-E$) hysteresis loops, we found that the Gd-doped NaBTi thin film, among all the films, exhibited the highest ferroelectric remnant polarization of 2$P_r$ = 37.4 $\mu$C/cm$^2$ and a low coercive electric field of 2$E_c$ = 187 kV/cm at an applied electric field of 475 kV/cm. Furthermore, the lowest value of the leakage current density of 6.12$\times$10$^{7}$ A/cm$^2$ at an applied electric field of 100 kV/cm was measured for the Gd-doped NaBTi thin film.
PACS numbers: 77.55.-g, 77.55.fp, 73.61.-r
Keywords: Na$_{0.5}$Bi$_{4.5}$Ti$_4$O$_{15}$ thin film, Chemical solution deposition, Microstructure, Electrical properties, Ferroelectric properties


November 2017, 67 (11)
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