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Effect of Indium Concentration on the Morphological and Photoluminescence Properties of In-doped ZnO Nanorods
New Phys.: Sae Mulli 2017; 67: 1291~1296
Published online November 30, 2017;
© 2017 New Physics: Sae Mulli.

Fan ZHANG1, Hong Seung KIM*1, Nak Won JANG2

1 Department of Electronic Material Engineering, Korea Maritime and Ocean University, Busan 49112, Korea
2 Division of Electrical and Electronics Engineering, Korea Maritime and Ocean University, Busan 49112, Korea 
Correspondence to:
Received August 11, 2017; Revised September 27, 2017; Accepted September 29, 2017.
cc This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License ( which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
In-doped ZnO nanorods with various indium concentrations were grown on silicon substrates with a ZnO seed layer by using the hydrothermal method. Although well-aligned undoped ZnO nanorods were synthesized and crystallized in a hexagonal structure with good quality, once an indium source had been introduced, the diameter of the In-doped ZnO nanorod showed a linear increase with one exception: a decrease in the diameter of the In-doped ZnO nanorod with 5 wt.% indium. Correspondingly, the crystalline quality and the optical properties of In-doped ZnO nanorods improved with increasing indium concentration. In conclusion, the indium-doping concentration plays an important role in determining morphology and the photoluminescence properties of In-doped ZnO nanorods. The possible growth mechanism, which is affected by the indium doping at different concentration, is discussed. 
PACS numbers: 78.20.-e, 81.07.-b, 81.07.Gf, 81.05.Dz
Keywords: Nanorod, In-doped ZnO, Hydrothermal method, Photoluminescence property

November 2017, 67 (11)
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