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https://doi.org/10.3938/NPSM.67.1302
Study of the Strain and Electric Properties of Fe-doped GaN Grown on Si(110) by Using Molecular Beam Epitaxy
New Phys.: Sae Mulli 2017; 67: 1302~1307
Published online November 30, 2017;  https://doi.org/10.3938/NPSM.67.1302
© 2017 New Physics: Sae Mulli.

Sang-Tae LEE1, Byung-Guon PARK1, Moon-Deock KIM*1, Song-Gang KIM2

1 Department of Physics, Chungnam National University, Daejeon 34134, Korea
2 Department of Information and Communications, Joongbu University, Goyang 10279, Korea
Correspondence to: mdkim@cnu.ac.kr
Received September 1, 2017; Revised September 27, 2017; Accepted September 27, 2017.
cc This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract
We have investigated the effect of Fe doping on the structural and the electrical properties of a GaN buffer grown on a Si(110) substrate by using molecular beam epitaxy (MBE). The doping concentrations were controlled by using the temperature of the Fe diffusion cell (800, 1000 and 1200 $^\circ$C, respectively). The surface roughness of Fe-doped GaN was observed by using scanning electron microscopy and refraction high electron energy diffraction. The stresses and the threading dislocation density of Fe-doped GaN were investigated by using the Raman shift and high-resolution X-ray diffraction. The increase in the number of threading dislocations was found to be due to the tensile stress caused by the Fe atoms. The leakage current paths were generated by the high density of dislocations in the GaN buffer with a high Fe-doping concentration(1 $\times$ 10$^{18}$~10$^{19}$ cm$^{-3}$). Moreover, a semi-insulating characteristic(1 $\times$ 10$^9$ $\Omega/$□) was observed in the GaN buffer with low doping concentration (1 $\times$ 10$^{17}$ cm$^{-3}$) due to the Fe-related deep levels compensating for the residual donors.
PACS numbers: 81.05.Ea, 81.15.Hi, 61.72.Dd, 73.61.Ey, 72.15.Eb
Keywords: GaN, MBE, Fe-doping, Dislocation, Compensation effect


November 2017, 67 (11)
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