search for
Growth of Amorphous Titanium-Oxide Thin Films by Using Different Oxygen Partial Pressures
New Phys.: Sae Mulli 2017; 67: 1399~1403
Published online November 30, 2017;
© 2017 New Physics: Sae Mulli.

Jin-Soo KIM1, Hyeok JEE1, Hye-Won SEO*2

1 Department of Physics, Jeju National University, Jeju 63243, Korea
2 Department of Physics and Research Institute for Basic Sciences, Jeju National University Jeju 63243, Korea
Correspondence to:
Received September 8, 2017; Revised October 8, 2017; Accepted October 9, 2017.
cc This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License ( which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Amorphous titanium-dioxide thin films were deposited by using a DC sputtering method and controlling the partial pressure of the argon$\cdot$oxygen gas at room temperature. By monitoring the optical emission spectra during the growth, we studied the sputtering plasma species and energy. We then found an increase in the amount of the TiO$^\ast$ species, as compared to the Ti$^\ast$ and the Ar$^\ast$ species, at a higher oxygen partial pressure for a fixed argon pressure. The decreased Ar$^\ast$ was responsible for the lower sputtering and growth rate. The incorporation of TiO$^\ast$ in the growth of amorphous titanium-dioxide thin films resulted in a higher oxygen content, which was revealed by the wider energy band gap and the improved transmission properties in the visible range.  
PACS numbers: 52.25.Os, 61.43.Dq, 78.20.-e, 81.15.Cd
Keywords: Titanium-oxide, Amorphous semiconductor, Plasma emission spectroscopy 

November 2017, 67 (11)
  • Scopus
  • CrossMark