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Properties of GaSb epi-layer grown by molecular beam epitaxy with various growth temperatures
New Phys.: Sae Mulli
Published online January 23, 2018;  
© 2018 New Physics: Sae Mulli.

Jin Hee Park, Hyun Jun Jo, Mo Geun So, Jae Cheol Shin, Jong Su Kim*, Tae Hyeon Ku, Jun Oh Kim, Sang Jun Lee
Received November 28, 2017; Revised January 18, 2018; Accepted January 23, 2018.
In this work, the structural and optical properties of GaSb epi-layers were investigated by using X-ray diffraction (XRD) photoluminescence (PL) and photoreflectance (PR) measurement. All sample were grown by molecular beam epitaxy with various growth temperatures ($T_s$ of 485 ~ 540 $^\circ$C ). The XRD results of the samples showed that the full width at half maximum (FWHM) of XRD curves increased with increasing growth temperature due to the formation of defects in the epi-layer. The PL results indicated that the V$_{Ga}$, Ga$_{Sb}$ and related defects were formed in the epi-layer caused by growth temperature effects. The PR spectra of GaSb epi-layers clearly exhibit the Franz-Keldysh oscillations (FKO) caused by the interface electric fields ($F$). The the $F$ between p-GaSb epi-layer and $n^+$-substrate interface were decreased from 78.4 to 65.6 kV/cm as increasing Ts. We confirmed that the change of the $F$ due to the change of p-type carrier concentrations cause by the formation of defect stats as increasing $T_s$ of 485 ~540 $^\circ$C.

February 2018, 68 (2)
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