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https://doi.org/10.3938/NPSM.68.20
Study on the Crystallinity Change Caused by Heat Treatment of AlN Thin Films Grown by Using Pulsed Sputter Deposition
New Phys.: Sae Mulli 2018; 68: 20~24
Published online January 31, 2018;  https://doi.org/10.3938/NPSM.68.20
© 2018 New Physics: Sae Mulli.

Junseck CHOI1, Dongwan KO1, Sungmin CHO2, Sangtae LEE3, Jiho CHANG*1,2

1 Major of Electronic Materials Engineering, Korea Maritime and Ocean University, Busan 49112, Korea
2 Department of Convergence Study on the Ocean Science and Technology, Korea Maritime and Ocean University, Busan 49112, Korea
3 Department of Offshore Plant Management, Korea Maritime and Ocean University, Busan 49112, Korea
Correspondence to: jiho_chang@hhu.ac.kr
Received September 13, 2017; Revised November 14, 2017; Accepted November 27, 2017.
cc This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract
AlN thin films were grown by using pulsed sputter deposition (PSD), and the cause of the crystallinity change caused by heat treatment was investigated. The AlN thin films were grown on a sapphire substrate and annealed at temperatures of 700 ~ 1100 $^\circ$C by flowing nitrogen gas through a horizontal furnace. The change in the surface morphology, the crystallinity, and the vibration mode were investigated. The PSD-grown samples showed relatively good crystallinity with a very flat surface. Furthermore, the effect of residual strain, which is commonly observed in thin AlN films deposited by sputtering, was confirmed using X-ray diffraction. When the heat treatment temperature was above 900 $^\circ$C, surface oxidation proceeded rapidly, and the surface morphology and the changes in the crystal phase were confirmed. From the results of Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy, the oxidation observed during annealing was found to be related to the interstitial Al defects occurring during film formation.
PACS numbers: 81.05.Ea, 77.55.hd, 64.70.dg
Keywords: AlN, PSD, XRD, Annealing, Crystallinity change


May 2018, 68 (5)
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