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Effect of Plasma Treatment on a SiO$_2$ Gate Insulator in Solution-Processed Amorphous InGaZnO Thin-Film Transistors
New Phys.: Sae Mulli 2018; 68: 32~38
Published online January 31, 2018;
© 2018 New Physics: Sae Mulli.

Bumseul BAEK, Jaewook JEONG*

School of Information and Communication Engineering, Chungbuk National University, Cheongju 28644, Korea
Correspondence to:
Received October 13, 2017; Revised November 20, 2017; Accepted November 20, 2017.
cc This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License ( which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
The effects of a plasma treatment with He or N$_2$ on the SiO$_2$ gate insulator of a solution-processed amorphous indium-gallium-zinc-oxide thin-film transistor (a-IGZO TFT) were analyzed. Positive shifts of the threshold voltage and decreases in the field-effect mobility without variations in the subthreshold slopes were observed for the two plasma-treatment conditions. This was due to the formation of dangling bonds in the SiO$_2$/IGZO interface, which led to increases in the number of acceptor-like interfacial deep states. In particular, in comparison with the He plasma treatment, the N$_2$ plasma treatment induced a twofold increase in the number of interfacial deep states, which originated from the additional doping effect of nitrogen. This doping effect was confirmed using X-ray photoelectron spectroscopy.
PACS numbers: 81.05.Gc, 81.20.Fw
Keywords:  SiO$_2$, Plasma treatment, Solution process, IGZO, TFT

May 2018, 68 (5)
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