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https://doi.org/10.3938/NPSM.68.39
Growth of an AlN Epilayer by Using Mixed-Source Hydride Vapor Phase Epitaxy
New Phys.: Sae Mulli 2018; 68: 39~45
Published online January 31, 2018;  https://doi.org/10.3938/NPSM.68.39
© 2018 New Physics: Sae Mulli.

Sung Geun BAE1, Injun JEON1, Min YANG1, Sam Nyung YI1, Hyung Soo AHN*1, Hunsoo JEON2, Kyung Hwa KIM†2, Sang Chil LEE3, Suck-Whan KIM‡4

1 Department of Electronic Material Engineering, Korea Maritime and Ocean University, Busan 49112, Korea
2 Compound Semiconductor Fabrication Technology Center and Department of Electronic Material Engineering, Korea Maritime and Ocean University, Busan 49112, Korea
3 Faculty of Science Education and Research Institute of Education & Science, Jeju National University, Jeju 63243, Korea
4 Department of Physics, Andong National University, Andong 36729, Korea
Correspondence to: *ahnhs@kmou.ac.kr, †kimkh@kmou.ac.kr, ‡swkim@anu.ac.kr
Received September 8, 2017; Revised October 16, 2017; Accepted October 18, 2017.
cc This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract
A high-quality AlN epilayer as a base for next generation power semiconductor devices was grown by the mixed-source hydride vapor phase epitaxy (HVPE) method. Mixed-source HVPE is a growth method that used a mixed-source of solid-state semiconductor materials and is different from the existing HVPE method. Various substrates having an influence on the growth of AlN epilayers were analyzed. Changes in the crystal structure and threading dislocation concentrations in AlN epilayers were investigated by using X-ray diffraction (XRD) measurements. In addition, the origin of the defects caused by the lattice mismatch between the grown epilayer and the crystal structure of the substrate was analyzed, and growth characteristics of AlN epilayers grown by using the mixed-source HVPE method were investigated. 
PACS numbers: 81.05.Ea, 81.10.Dn, 68.65.Ac
Keywords: Hydride vapor phase epitaxy (HVPE), Mixed-source method, AlN epilayer, Power semiconductor devices, RF heating-coil


May 2018, 68 (5)
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