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https://doi.org/10.3938/NPSM.68.160
Revisiting the Temperature Dependency in Solution-Processed Amorphous InGaZnO Thin-Film Transistors
New Phys.: Sae Mulli 2018; 68: 160~165
Published online February 28, 2018;  https://doi.org/10.3938/NPSM.68.160
© 2018 New Physics: Sae Mulli.

Seungwoon LEE, Jaewook JEONG*

School of Information and Communication Engineering, Chungbuk National University, Cheongju 28644, Korea
Correspondence to: jjeong@cbnu.ac.kr
Received December 1, 2017; Revised December 21, 2017; Accepted December 27, 2017.
cc This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract
In this paper, the temperature-dependent transfer characteristics of solution-processed amorphous InGaZnO thin-film transistors (a-IGZO TFTs) that were fabricated applying different annealing times were studied. The TFTs were annealed in air for 30, 60, or 120 min at 400 $^\circ$C. All the samples showed normal ON/OFF transfer characteristics with good performance at room temperature. However, the sample to which the 120 min annealing had been applied showed a normal temperature dependency and obeyed the Meyer-Neldel rule while the other samples (30 min and 60 min annealing times) showed abnormal temperature dependencies. If the normal temperature dependency and the corresponding Meyer-Neldel behavior are to be obtained for the solution-processed a-IGZO TFTs, an amorphous phase and a complete sol-gel reaction are essential. In addition, the results obtained in this study can be used to determine the proper annealing time for solution-processed oxide-based TFTs.
PACS numbers: 81.05.Gc, 81.20.Fw
Keywords: Solution-based, a-InGaZnO, Thin-film transistors, Annealing time, Temperature dependency


June 2018, 68 (6)
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