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Simulation of a Silicon-Pixel Detector
New Phys.: Sae Mulli 2018; 68: 189~195
Published online February 28, 2018;
© 2018 New Physics: Sae Mulli.

Jiyeon KWON*, Sumin EY, Yoohan KIM, MinJung KWEON

Department of Physics, Inha University, Incheon 22212, Korea
Correspondence to:
Received December 18, 2017; Revised January 8, 2018; Accepted January 8, 2018.
cc This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License ( which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
In heavy-ion collision experiments, many kinds of detectors are used for detecting particles. Especially, semiconductor detectors play a important role in determining the position of an incident particle thanks to their excellent position resolution. A charged particle passing through a semiconductor detector makes electron-hole pairs. The pairs go toward the electrodes following the electric field formed inside the detector. The trajectory and the momentum of the particle can be calculated by collecting the electrical signal induced by the movement of the pairs. In this study, we simulated a detector that consisted of p-type silicon pixels attached on an n-type silicon bulk. First we defined the geometrical and the electrical properties of the detector via the Graphical User Interface (GUI) of the simulation and executed the program. Then, a simulation based on the iteration method and the multigrid method was used to calculate the potential and the electric field and to show the signal generated by the passing particle. The simulation was based on the ROOT software developed by the CERN.
PACS numbers: 29.40.Gx
Keywords: Nuclear physics, Detector, Simulation

February 2018, 68 (2)
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