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Polarization Characteristics of an Organic Light-Emitting Diode with an Ion-Beam-Treated MoS$_2$ Hole Transport Layer
New Phys.: Sae Mulli 2018; 68: 256~261
Published online February 28, 2018;
© 2018 New Physics: Sae Mulli.

Gyu Jin CHOI1, Jin Seog GWAG*1, Jong Min SON2, Chae Won BAEK2, Seung Hwan JEONG2, Jong Gu PARK2

1 Department of Physics, Yeungnam University, Gyeongsan 38541, Korea
2 Deagu Science High School, Daegu 42110, Korea
Correspondence to:
Received December 15, 2017; Revised January 9, 2018; Accepted January 11, 2018.
cc This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License ( which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
In this study, we present the polarization property of an organic light-emitting diode characterized by a low-energy and high-linearity ion-beam-treated MoS$_2$ hole-transport layer deposited by using radio-frequency sputtering in order to obtain highly-polarized light. Poly (9,9-dioctylfluorene-alt-benzothiadiazole), which exhibits a liquid crystal phase at a temperature higher than 180 $^\circ$C, was used as the light-emitting material. The polarization characteristics of the organic light-emitting device fabricated under various ion-beam irradiation conditions were examined through photoluminescence experiments. The results showed that an optimal polarization ratio of 11:1 was obtained for a ion-beam-irradiated angle of 30 degrees, an irradiation time of 30 seconds, a current density of 100 $\mu$A/cm$^2$, and an ion-beam energy of 300 eV. When the optimized organic light-emitting diode was used as a backlight for a twisted nematic liquid-crystal display, its transmittance was improved by about 25% or more.
PACS numbers: 42.79.Kr, 42.81.Gs, 79.20.Rf
Keywords: Organic light emitting diode, Polarization, Ion beam treatment, MoS$_2$

February 2018, 68 (2)
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