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Properties of a GaSb Epilayer Grown by Using Molecular Beam Epitaxy with Various Growth Temperatures
New Phys.: Sae Mulli 2018; 68: 301~307
Published online March 30, 2018;
© 2018 New Physics: Sae Mulli.

Jin Hee PARK1, Hyun-Jun JO1, Mo Geun SO1, Jae Cheol SHIN1, Jong Su KIM*1, Tae Hyeon KU2, Jun Oh KIM2, Sang Jun LEE2

1 Department of Physics, Yeungnam University, Gyeongsan 38541, Korea
2 Korea Research Institute of Standards and Science, Daejeon 34113, Korea
Correspondence to:
Received November 28, 2017; Revised January 18, 2018; Accepted January 23, 2018.
cc This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License ( which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
In this work, the structural and the optical properties of GaSb epilayers were investigated by using X-ray diffraction (XRD), photoluminescence (PL), and photoreflectance (PR) measurements. All sample were grown by using molecular beam epitaxy, but at various growth temperatures ($T_s$) from 485 to 540 $^\circ$C. The XRD results showed that the full width at half maximum (FWHM) of the XRD curves increased with increasing growth temperature due to the formation of defects in the epilayer. The PL results indicated that V$_{Ga}$, Ga$_{Sb}$ and related defects were formed in the epilayer due to the effects of the growth temperature. The PR spectra of the GaSb epilayers clearly exhibited Franz-Keldysh oscillations (FKOs) caused by the interface electric fields. The inter face electric field between the p-GaSb epilayer and the n$^+$-substrate decreased from 78.4 to 65.6 kV/cm with increasing $T_s$. We confirmed that the change in the interface electric field was due to the change in the p-type carrier concentration caused by the formation of defect states with increasing $T_s$ from 485 to 540 $^\circ$C.
PACS numbers: 78.66.Fd, 78.40.-q, 73.40.Lq, 73.61.Ey
Keywords: GaSb epilayer, Defects, Growth temperature, Interface electric field

July 2018, 68 (7)
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