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Internal Electric Field Caused by the Doping Concentration in the Emitter Layer in p$^+$-n-n$^+$ GaAs Solar Cells
New Phys.: Sae Mulli 2018; 68: 381~386
Published online April 30, 2018;
© 2018 New Physics: Sae Mulli.

Mo Geun SO1, Hyun-Jun JO1, Young Hee MUN1, Jong Su KIM*1, Yeongho KIM2, Jun Oh KIM2, Sang Jun LEE2

1 Department of Physics, Yeungnam University, Gyeongsan 38541, Korea
2 Korea Research Institute of Standards and Science, Daejeon 34113, Korea
Correspondence to:
Received November 23, 2017; Revised February 12, 2018; Accepted March 2, 2018.
cc This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License ( which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
The internal electric field ($F$) of GaAs solar cells (SC) with different doping concentrations of the emitter layers has been investigated by using photoreflectance (PR) spectroscopy. At room temperature, the $F$ of the highly doped SC (HDSC) is 91.5 kV/cm, which is lower than the 6.3 kV/cm for the low-doping SC (LDSC). From the excitation-light-intensity ($I_{ex}$)-dependent PR, the drop in $F$ is about 20 kV/cm, which is larger than the theoretical value. The large drop in $F$ in the HDSC is confirmed to have been caused by an enhancement of the field screening effect resulting from the higher potential barrier effect of the window layer. Also, in the case of the LDSC, the rapid decrease in $F$ with decreasing temperature can be explained by a change in the height of the potential barrier.
PACS numbers: 78.66.Fd, 78.40.-q, 73.40.Lq, 73.50.Gr
Keywords: GaAs, Solar cell, Doping concentration, Internal electric field

August 2018, 68 (8)
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