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https://doi.org/10.3938/NPSM.68.467
Study on the Sensitivity of a Temperature Sensor with a Substrate
New Phys.: Sae Mulli 2018; 68: 467~471
Published online April 30, 2018;  https://doi.org/10.3938/NPSM.68.467
© 2018 New Physics: Sae Mulli.

Taekyun YOO1, Doo Jae PARK2, Moongyu JANG*1,3

1 Department of Nano-Medical Devices Engineering, Hallym University, Chuncheon 24252, Korea
2 Department of Physics, Hallym University, Chuncheon 24252, Korea
3 Department of Materials Science and Engineering, Hallym University, Chuncheon 24252, Korea
Correspondence to: jangmg@hallym.ac.kr
Received January 23, 2018; Revised February 14, 2018; Accepted March 2, 2018.
cc This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract
In this study, a temperature sensor was fabricated on a silicon-on-insulator (SOI) substrate by using a semiconductor and microelectromechanical systems (MEMS) process to improve the performance of the temperature sensor. For the fabrication of the silicon membrane substrate, a wet etching method using a KOH solution was utilized. The sensitivity and the response time of the temperature sensor fabricated on a silicon membrane were significantly improved compared to those for a temperature sensor manufactured on a slide glass. The thermal response characteristics were analyzed by using Fick's second law modeling. The reaction speed of the sensor on a silicon membrane was improved by about a factor of five and its sensitivity by a factor of four compared with the values for the sensor on a slide glass substrate.
PACS numbers: 07.07.Df, 82.39.Wj
Keywords: Temperature sensor, MEMS process, KOH wet etching, Sensitivity


August 2018, 68 (8)
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