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Formation of Silica Nanowires Using Silicon Oxide Films: Oxygen Effect
New Phys.: Sae Mulli
Published online August 16, 2018;  
© 2018 New Physics: Sae Mulli.

Jong-Hwan Yoon*
Received July 16, 2018; Revised August 14, 2018; Accepted August 15, 2018.
Abstract
In this study, silica nanowires were fabricated using silicon oxide (SiO$_x$) films and compared with those formed using Si wafers. The fabrication was achieved by thermal annealing of SiO$_x$ films with different oxygen concentrations coated with a thin Ni film. For SiO$_x$ films having an oxygen content less than 50 at.%, it was found that there were no distinct differences in the formation mechanism, morphologies, and physical properties between two cases. In particular, the uniformity of the thickness of the nanowires was shown to be better in silicon oxide films.


October 2018, 68 (10)
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