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Optical Properties of Plasmons in a GaAs/Al$_x$Ga$_{1-x}$As Multiple Quantum Well Under Electric and Magnetic Fields
New Phys.: Sae Mulli 2018; 68: 1183~1191
Published online November 30, 2018;
© 2018 New Physics: Sae Mulli.

Hyung Soo AHN*1, Sang Chil LEE2, Suck Whan KIM†3

1 Department of Applied Physics, Korea Maritime University, Busan 49112, Korea
2 Faculty of Science Education, Jeju National University, Jeju 63243, Korea
3 Department of Physics, Andong National University, Andong 36729, Korea
Correspondence to: *, †
Received September 11, 2018; Revised October 1, 2018; Accepted October 1, 2018.
cc This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License ( which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
The plasmon behaviors in a superlattice of GaAs/Al$_x$Ga$_{1-x}$As multiple quantum wells with a half-parabolic confining potential due to different dielectric interfaces are studied under magnetic and electric fields perpendicular and parallel to the superlattice axis by using a previously published theoretical framework. From the density-density correlation functions by considering the intrasubband and the inter-subband transitions under the random phase approximation, we calculate the dispersion energies of the surface and the bulk states as functions of the composition of the multiple quantum well structure and of the magnetic field strength and the average electric field strength over the quantum well. The Raman intensities for various magnetic field strengths and average electric field strengths over the quantum well are also obtained as a function of the energy of the incoming light for these states.
PACS numbers: 68.60.-p, 73.21.Cd, 73.21.Fg, 75.70.Ak
Keywords: GaAs/Al$_x$Ga$_{1-x}$As, Superlattice, Raman intensity, Plasmon, Dispersion relation, Random phase approximation, Density-density correlation function

April 2019, 69 (4)
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