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https://doi.org/10.3938/NPSM.68.1192
Performance of Pentacene-based Thin-film Transistors Fabricated at Different Deposition Rates
New Phys.: Sae Mulli 2018; 68: 1192~1195
Published online November 30, 2018;  https://doi.org/10.3938/NPSM.68.1192
© 2018 New Physics: Sae Mulli.

Jinho HWANG1, Duri KIM1, Meenwoo KIM1, Hanju LEE1, Arsen BABAJANYAN1, Levon ODABASHYAN1, Zhirayr BAGHDASARYAN1, Kiejin LEE*1, Deokjoon CHA2

1 Department of Physics, Sogang University, Seoul 04107, Korea
2 Department of Physics, Kunsan National University, Gunsan 54050, Korea
Correspondence to: Klee@sogang.ac.kr
Received October 2, 2018; Revised October 17, 2018; Accepted October 17, 2018.
cc This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract
We studied the electrical properties of organic thin-film transistors (OTFTs) fabricated at different deposition rates by measuring the field-effect mobility and the threshold voltages. As the active layer, pentacene thin film with a thickness of 50 nm was deposited at a rate of 0.05 Å/s to 1.14 Å/s. The thickness of the drain-source gold electrode was 50 nm. The mobility was 1.9 $\times$ 10$^{-1}$ cm$^2$/V$\cdot$s at a deposition rate of 0.05 Å/s, the mobility increased to 5.2 $\times$ 10$^{-1}$ cm$^2$/V$\cdot$s when the deposition rate was increased to 0.4 Å/s, and then the mobility decreased to 6.5 $\times$ 10$^{-2}$ cm$^2$/V$\cdot$s when the deposition rate decreased to 1.14 Å/s. Thus, the mobility of pentacene OTFTs was observed to depend on the thermal deposition rate.
PACS numbers: 73.90.+f
Keywords: Organic thin film transistor, Deposition rate, Pentacene, Mobility


November 2018, 68 (11)
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