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Formation of Silica Nanowires by Using Silicon Oxide Films: Oxygen Effect
New Phys.: Sae Mulli 2018; 68: 1203~1207
Published online November 30, 2018;
© 2018 New Physics: Sae Mulli.

Jong-Hwan YOON*

Department of Physics, Kangwon National University, Chuncheon 24341, Korea
Correspondence to:
Received July 16, 2018; Revised August 14, 2018; Accepted August 15, 2018.
cc This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License ( which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
In this study, silica nanowires were formed using silicon oxide films with different oxygen contents, and their microstructure and physical properties were compared with those of silica nanowires formed using Si wafers. The silicon oxide films were fabricated by using a plasma-enhanced chemical vapor deposition method. Silica nanowires were formed by thermally annealing silicon oxide films coated with nickel films as a catalyst. In the case of silicon oxide films having an oxygen content of approximately 50 at.% or less, the formation mechanism, microstructure, and physical properties of the nanowires were not substantially different from those of the silicon wafer. In particular, the uniformity of the thickness showed better behavior in the silicon oxide films. These results imply that silicon oxide films can be used as an alternative for fabricating high-quality silica nanowires at low cost.
PACS numbers: 81.05.-t
Keywords: Silicon oxide, Silica nanowire, Silicon wafer

November 2018, 68 (11)
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