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Properties of Perovskite Materials and Devices Fabricated Using the Solvent Engineered One-Step Spin Coating Method
New Phys.: Sae Mulli 2018; 68: 1208~1214
Published online November 30, 2018;
© 2018 New Physics: Sae Mulli.

Jungseock OH, Namhee KWON, DeokJoon CHA, JungYup YANG*

Department of Physics, Kunsan National University, Gunsan 54150, Korea
Correspondence to:
Received October 2, 2018; Revised October 17, 2018; Accepted October 17, 2018.
cc This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License ( which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
The one-step spin coating method is reported as an excellent thin film process because it can be easily used to fabricate high-quality methyl-ammonium lead tri-iodide (MAPbI$_3$) perovskite layers. One of the important things in the one-step spin coating method towards obtaining high-quality MAPbI$_3$ layers is the anti-solvent (AS) engineering, which consists of an one-step deposition of the MAPbI$_3$ film and dripping of the AS. The properties of the MAPbI$_3$ layer were found to be strongly influenced by the amount, dispensing speed, and spraying time of the AS solution. The MAPbI$_3$ solution was prepared by dissolving lead iodide and methyl-ammonium iodide in N,N-dimethylformamide and adding N,N-dimethyl sulfoxide. Diethyl ether (DE) was used for the AS solution. The results indicate that a MAPbI$_3$ layer appropriately sprayed with DE is beneficial for improving film quality and device efficiency because nucleation of MAPbI$_3$ layer is affected by the characteristics of DE, which affect the film's crystallinity, density, and surface morphology. The MAPbI$_3$ layer, which was optimized by using 0.7 mL of DE, a 3.03 mL/sec dispensing speed, and a 7 second time to spray after spinning showed the best efficiency of 13.74%, which was reproducible.
PACS numbers: 85.30.-z, 73.50.Pz, 88.40.H-
Keywords: Organic-inorganic hybrid perovskite, Semiconductor devices, Photovoltaic devices, Anti-solvent engineering

November 2018, 68 (11)
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