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Ab-Initio Study of the Schottky Barrier in Two-Dimensional Lateral Heterostructures by Using Strain Engineering
New Phys.: Sae Mulli 2018; 68: 1288~1292
Published online December 31, 2018;
© 2018 New Physics: Sae Mulli.

Hwihyeon HWANG, Jaekwang LEE*

Department of Physics, Pusan National University, Busan 46241, Korea
Correspondence to:
Received November 6, 2018; Accepted November 13, 2018.
cc This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License ( which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Using density functional theory calculations, we study the Schottky barrier (SB) change in a two-dimensional (2D) lateral heterostructure consisting of semiconducting 2H-MoS$_2$ and the ferromagnetic metal 2H-VS$_2$ by applying a uniaxial tensile strain from 0% to 10%. We find that the SB for holes is much smaller than that for electrons and that SB height decreases monotonically under increasing tensile strain. In particular, we find that a critical strain where the spin-up SB for holes is abruptly reduced to zero exists near a strain of 8%, implying that only the spin-up holes are allowed to flow through the MoS$_2$-VS$_2$ lateral heterostructure. Our results provide fundamental information and can be utilized to guide the design of 2D lateral heterostructure-based novel rectifying devices by using strain engineering.
PACS numbers: 73.40.Kp, 73.20.At, 73.20.-r
Keywords: Two-dimensional materials, Schottky barrier, Tensile strain, Density functional theory

April 2019, 69 (4)
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