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Output Characteristics of on Actively Q-switched 1340 nm/670 nm-Nd:GdVO$_4$/LiB$_3$O$_5$(LBO) Laser
New Phys.: Sae Mulli 2019; 69: 317~324
Published online March 29, 2019;
© 2019 New Physics: Sae Mulli.

Mi Ru SON1, Cha Gon PARK1, Han Tae CHOO*1, Kun Hee RHYEE2

1Department of Optical Engineering, Kumoh National Institute of Technology, Gumi 39253, Korea
2Department of Physics, Kumoh National Institute of Technology, Gumi 39253, Korea
Correspondence to:
Received December 11, 2018; Revised January 6, 0201; Accepted January 18, 2019.
cc This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License ( which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
We have investigated the output characteristics of a diode-end-pumped, actively Q-switched, 1340 nm Nd:GdVO$_4$ laser with an acousto-optic device and a Z-type intracavity, frequency-doubled, 670 nm Nd:GdVO$_4$/LiB$_3$O$_5$(LBO) laser with LBO as a nonlinear crystal. The pulse energy and the pulse width theoretically calculated from the rate equation for the actively Q-switched solid state laser were compared with the experimental results. At a Q-switched pulse repetition rate of 5 kHz and an incident pump power of 17 W, the maximum average output powers of the Q-switched 1340 nm and 670 nm laser were 1.27 W and 0.94 W, respectively, corresponding to an output power efficiency of 7.5\% and an optical conversion of 5.5\%. Also, their pulse energies and pulse widths were 233 $\mu$J, 32 ns and 102 $\mu$J, 41 ns, respectively. The values of $M^2$ for a 670 nm laser with a elliptical intensity distribution were 2.58 about the $x$-axis and 1.55 about the $y$-axis.
PACS numbers: 42.55.Xi, 42.60.Gd,
Keywords: Diode-pumped Nd:GdVO$_4$ laser, Actively Q-switched, Frequency doubling

March 2019, 69 (3)
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