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https://doi.org/10.3938/NPSM.69.369
Characterization of MgZnO films depending on the deposition power of RF sputtering system
New Phys.: Sae Mulli 2019; 69: 369~375
Published online April 30, 2019;  https://doi.org/10.3938/NPSM.69.369
© 2019 New Physics: Sae Mulli.

Joonyoung CHOI,  Jinyong KIM, Hyeona KIM, Ganghyeon PARK, Giseong LEE, Younjung JO*, Chang-Duk KIM

Department of Physics, Kyungpook National University, Daegu 41566, Korea
Correspondence to: duks@knu.ac.kr
Received December 11, 2018; Revised January 29, 2019; Accepted February 11, 2019.
cc This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract
The Dependence of the characteristics of MgZnO thin films deposited by using a RF sputtering system on the deposition power were investigated. A Mg$_{0.3}$Zn$_{0.7}$O target was used to deposit thin films at powers of 150 W, 200 W, 250 W, and 300 W. While the hexagonal (002) orientation in the X-ray diffractometry (XRD) patterns increases as the deposition power increases, the MgO (200) peak begins to appear and the MgZnO (002) peak sharply decreases at 300 W. X-ray photoelectron spectroscopy (XPS) measurements showed the binding energy of the Zn2$_{p3}$ peak to be is close to that of pure ZnO, which means an the improvement in the ZnO crystallinity with increasing deposition power. However, Hall measurements show that as the crystallinity improves, the oxygen vacancies, acting as electron donors, are reduced, as are the and electron concentration and mobility and the electrical conductivity.
PACS numbers: 61.66.Fn, 61.72.jd, 73.61.At, 81.15.Cd
Keywords: MgZnO, RF magnetron sputtering, X-ray photoelectron spectra, Oxygen vacancies


June 2019, 69 (6)
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