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Wide-Range Light Emission of Silicon Oxide Nanowires Grown Using Zinc as a Catalyst
New Phys.: Sae Mulli 2019; 69: 468~472
Published online May 31, 2019;
© 2019 New Physics: Sae Mulli.

Jong-Hwan YOON*

산화 실리콘 나노와이어, 산화 아연. 실리콘 나노결정, 광역 발광
Correspondence to:
Received April 1, 2019; Revised April 15, 2019; Accepted April 30, 2019.
cc This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License ( which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
We report the wide-range light emission from silicon-oxide (SiO$_x$) nanowires formed by using Zn as a catalyst. The SiO$_x$ nanowires were formed by exposing Zn film formed on a Si substrate to a plasma of silicon and oxygen at a low temperature of about 380$^\circ$C, and then the nanowires were annealed at a high temperature of 1100$^\circ$C. The resultant SiO$_x$ nanowires exhibited a photoluminescence spectrum with a wavelength range of about 350 to 900 nm. This was understood to result from the inclusion of ZnO and Si nanocrystals in the SiO$_x$ nanowires.
PACS numbers: 78.20.-e, 81.05.-t
Keywords: Silicon oxide nanowire, Zinc oxide, Silicon nanocrystal, Wide-range light emission

May 2019, 69 (5)
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