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Influence of the Energy Density in SrTiO$_3$ Homoepitaxial Thin Films Fabricated on SrTiO$_3$ (001) Substrates by using Pulsed Laser Deposition
New Phys.: Sae Mulli 2019; 69: 568~572
Published online May 31, 2019;
© 2019 New Physics: Sae Mulli.

Hien-Hoang VAN1, Heon-Jung KIM*1

Department of Physics, Daegu University, Daegu 38911, Korea
Correspondence to:
Received December 1, 2018; Revised March 6, 2019; Accepted March 8, 2019.
cc This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License ( which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
In this study, homoepitaxial SrTiO$_3$ thin films were deposited on SrTiO$_3$ (001) substrates with different energy density at very low oxygen partial pressure by using a pulsed laser deposition (PLD) method. We carried out X-ray diffraction (XRD), atomic force microscopy (AFM), and resistivity measurements to understand the crystallinity, morphology and electrical properties of these epitaxial films. All films showed homogeneous and uniform morphologies with small root mean square (RMS) roughnesses. The films also exhibited metallic behaviors at temperatures from 2 K to 300 K, indicating that our homoepitaxial SrTiO$_3$ thin films were doped because of nonstoichiometric cations or oxygen deficiencies.
PACS numbers: 03.65.-w
Keywords: Titanate, Homoepitaxy, Roughness, Pulsed laser deposition

May 2019, 69 (5)
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