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Study on the Correlation of Microstructure with Deposition Temperature of Thin Silicon Films by Using Spectroscopic Ellipsometry and Hydrogen Effusion
New Phys.: Sae Mulli 2019; 69: 584~589
Published online May 31, 2019;
© 2019 New Physics: Sae Mulli.

Ka-Hyun KIM*

Department of Physics, Chungbuk National University, Cheongju 28644, Korea
Correspondence to:
Received March 25, 2019; Revised April 18, 2019; Accepted May 2, 2019.
cc This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License ( which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
We analysed the material properties of thin-film silicon materials by using spectroscopic ellipsometry and hydrogen effusion. Hydrogenated amorphous silicon and the related thin film silicon material showed material properties significantly different from those of crystalline silicon, such as a wider band gap of about 1.7 eV, instead of the 1.1 eV in crystalline silicon, an elevated absorption coefficient, and characteristics of a direct bandgap. From a material point of view, an ellipsometry measurement is an indirect measurement because the result is usually given by a change in the polarization state of the probe light, so the ellipsometry measurement result must be transformed into meaningful parameters by modeling the measurement result. We used Tauc-Lorentz dispersion to model the ellipsometry measurement of the thin silicon film. In this paper, we discuss the modeling of spectroscopic ellipsometry data from thin-film silicon materials and the verification of the modeling result by using data from a complementary hydrogen effusion experiment.
PACS numbers: 07.60.Fs, 61.43.Dq, 68.55.−a
Keywords: Amorphous silicon, Silicon thin film, Ellipsometry

May 2019, 69 (5)
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