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Effect of Thermal Annealing on the Far Infrared Transmittance of a Silver Hole Array
New Phys.: Sae Mulli 2019; 69: 760~765
Published online July 31, 2019;
© 2019 New Physics: Sae Mulli.

Hyunbin PARK, Ha Sul KIM*

Department of Physics, Chonnam National University, Kwangju 61110, Korea
Correspondence to:
Received May 4, 2019; Revised May 31, 2019; Accepted June 5, 2019.
cc This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License ( which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
We fabricated an infrared plamonic device with a thickness of 50~nm, a hole pitch of 5.5~$\mu$m and a hole size of 3~$\mu$m. An x-ray diffraction (XRD) analysis confirmed the formation of silver oxide (AgO$_2$) after heat treatment at 400 $^\circ$C by using a rapid thermal processor. After the heat treatments the maximum transmittance of the plasmonic device was partially decreased, and wavelength of the maximum transmittance peak was shifted from 17~$\mu$m to 17.4~$\mu$m. In addition, the full width at half maximum increased from 2~$\mu$m to 5.4~$\mu$m. However, the overall spectral roughly doubled excluding the peak wavelength region transmittance. We consider this to be due to the change in the refractive index of the plasmonic device caused by the formation of silver oxide on the deposited silver. Therefore, the transmission wavelength band of the plasmonic device can be easily adjusted through a heat treatment method. 
PACS numbers: 42.82.--m, 66.70.Df, 81.07.--b
Keywords: Long wavelength infrared, Surface plasmon, Transmittance

October 2019, 69 (10)
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