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https://doi.org/10.3938/NPSM.69.786
Erratum: Comparison of the Electrical Characteristics of a Resistive Random Access Memory (RRAM) Device According to the Type of Metal Oxide
New Phys.: Sae Mulli 2019; 69: 786~786
Published online July 31, 2019;  https://doi.org/10.3938/NPSM.69.786
© 2019 New Physics: Sae Mulli.

Hong Chang KIM1, SukYeop CHUN1, GaYeong KIM1, JaeHun JEONG1, YeongSoo HA1, JinWoo PARK1, JuneHee PARK1, MoonGyu JANG2

1School of Nano Convergence Technology, Hallym University, Chuncheon 24252, Korea
2Research Institution of Nano Convergence Technology, Hallym University, Chuncheon 24252, Korea
Correspondence to: jangmg@hallym.ac.kr
cc This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract
위 논문의 저자 영문이름을 Hong Chang Kim $\rightarrow$ Hongchang Kim / SukYeop Chun $\rightarrow$ Sukyeop Chun / GaYeong Kim $\rightarrow$ Gayoung Lee / JaeHun Jeong $\rightarrow$ Jaehun Jeong / YeongSoo Ha $\rightarrow$ Yeongsoo Ha / JinWoo Park $\rightarrow$ Jinwoo Park / JuneHee Park $\rightarrow$ Junhee Park / MoonGyu Jang $\rightarrow$ Moongyu Jang 으로 수정합니다.


July 2019, 69 (7)
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