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A Study on the Electrical Properties in Nanocrystals-based Perovskite Light-emitting Diodes with Thermal Annealing
New Phys.: Sae Mulli 2019; 69: 895~899
Published online September 30, 2019;
© 2019 New Physics: Sae Mulli.

Bo Ram LEE*

Department of Physics, Pukyong National University, Busan 48513, Korea
Correspondence to:
Received August 12, 2019; Revised August 26, 2019; Accepted August 26, 2019.
cc This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License ( which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Nanocrystal (NC)-based perovskites are promising candidates as light-emitting diode (LED) materials due to their advantages of easy color tunability, emissions with narrow full widths at half maxim, and high photoluminescence quantum yields (PLQYs). Herein, we have investigated the effect of thermal annealing on the efficiency nanocrystal-based perovskite LEDS (PeLEDs). The thermal annealing can reduce the leakage current in PeLEDs, leading to improved device efficiency. In particular, PeLEDs with thermal annealing at 80$ ^{\circ}$C show an external quantum efficiency (EQE) of 1.49%, which is approximately 4-fold higher than the corresponding values for the PeLEDs without thermal annealing. Moreover, we clearly achieved a red emission at 755~nm via the control of the recombination zone.
PACS numbers: 85.60.$-$q, 85.60.Jb, 61.46.+w, 65.80.$-$q
Keywords: Perovskite, Light-emitting diodes, Nanocrystals, Thermal annealing

September 2019, 69 (9)
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