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The Characteristics of RRAM Devices Manufactured Using Tantalum Oxide and Titanium Oxide
New Phys.: Sae Mulli 2019; 69: 1021~1026
Published online October 31, 2019;
© 2019 New Physics: Sae Mulli.

Gayoung LEE1, Jaehun JEONG1, Sukyeop CHUN1, Hongchang KIM1, Junhee PARK1, Jae-Hyeon KO2, Moongyu JANG2

1School of Nano Convergence Technology, Hallym University, Chuncheon 24252, Korea
2Center of Nano Convergence Technology, Hallym University, Chuncheon 24252, Korea
Correspondence to:
Received July 25, 2019; Revised August 28, 2019; Accepted August 28, 2019.
cc This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License ( which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Neuromorphic chip is a device that can mimic the nervous system of a person's brain. A RRAM(resistive random access memory) is a non-volatile memory that can be applied in the field of neuromorphic technology. Because knowledge of the characteristics of resistance change is essential for applications as a synaptic device, in this study, metal-oxides-based RRAMs were manufactured using TiO$ _{x}$ and TaO$ _{x}$. Variations in the resistance due to the movements of oxygen vacancies were confirmed through the formation of conductive filaments. The current-voltage graph showed a definite switching behavior between low resistance and high resistance. TaO$ _{x}$-based RRAM showed better switching behavior than the TiO$ _{x}$ based RRAM due to the lower conduction-band off-set of TiO$ _{x}$. Thus, RRAM devices using TaOx could be applied to the field of neuromorphic devices by reflecting the obtained results.
PACS numbers: 85.30.$-$z, 73.40.Rw, 71.30.+h, 84.35.+i
Keywords: Neuromorphic, Resistive memory, TiO$ _{x}$, TaO$ _{x}$

October 2019, 69 (10)
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