New Physics: Sae Mulli

Aims and Scope

The origin of New Physics: Sae Mulli (NPSM, ISO abbreviation: New Phys.: Sae Mulli.): Sae Mulli (새물리 in Korean characters means ‘new physics’) is the oldest Korean pure scientific journal. It was first published in 1961 just after the Korean War by the Korean Physical Society (KPS). The primary mission of Sae Mulli was to start building up Korean physics research community from almost nothing and in fact Sae Mulli had made tremendous contributions to the Korean science community. Through a peer-review system, Sae Mulli had continued elevating the level of scientific researches, consequently becoming a cornerstone of the economic miracle of Korea...

Editor-in-Chief : Sunglae CHO
New Physics: Sae Mulli Editorial Board

pISSN : 0374-4914
eISSN : 2289-0041

Tel : +82-2-556-4737
Fax : +82-2-554-1643
E-mail: npsm@npsm-kps.org

Research Papers

Study on the Correlation of Microstructure with Deposition Temperature of Thin Silicon Films by Using Spectroscopic Ellipsometry and Hydrogen Effusion

Ka-Hyun KIM*

Department of Physics, Chungbuk National University, Cheongju 28644, Korea

We analysed the material properties of thin-film silicon materials by using spectroscopic ellipsometry and hydrogen effusion. Hydrogenated amorphous silicon and the related thin film silicon material showed material properties significantly different from those of crystalline silicon, such as a wider band gap of about 1.7 eV, instead of the 1.1 eV in crystalline silicon, an elevated absorption coefficient, and characteristics of a direct bandgap. From a material point of view, an ellipsometry measurement is an indirect measurement because the result is usually given by a change in the polarization state of the probe light, so the ellipsometry measurement result must be transformed into meaningful parameters by modeling the measurement result. We used Tauc-Lorentz dispersion to model the ellipsometry measurement of the thin silicon film. In this paper, we discuss the modeling of spectroscopic ellipsometry data from thin-film silicon materials and the verification of the modeling result by using data from a complementary hydrogen effusion experiment.

New Phys.: Sae Mulli 2019; 69: 584-589

Wide-Range Light Emission of Silicon Oxide Nanowires Grown Using Zinc as a Catalyst

Jong-Hwan YOON*

산화 실리콘 나노와이어, 산화 아연. 실리콘 나노결정, 광역 발광

We report the wide-range light emission from silicon-oxide (SiO$_x$) nanowires formed by using Zn as a catalyst. The SiO$_x$ nanowires were formed by exposing Zn film formed on a Si substrate to a plasma of silicon and oxygen at a low temperature of about 380$^\circ$C, and then the nanowires were annealed at a high temperature of 1100$^\circ$C. The resultant SiO$_x$ nanowires exhibited a photoluminescence spectrum with a wavelength range of about 350 to 900 nm. This was understood to result from the inclusion of ZnO and Si nanocrystals in the SiO$_x$ nanowires.

New Phys.: Sae Mulli 2019; 69: 468-472

New Phys.: Sae Mulli 2019; 69: 458~589

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Research Papers

Electron-Beam-Assisted Low-Temperature Crystallization of CuInSe$_\text{2}$

Maeng Jun KIM, Sung Youp LEE, Hyeong Rag LEE, Sang Ho SOHN*

New Phys.: Sae Mulli 2019; 69: 458-461 https://doi.org/10.3938/NPSM.69.458