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Fig. 3. SEM images of carbon whisker deposited (a) on Si substrate without transition metal coating (deposition for 3 h) (b) Bias (2 h) + non Bias (1 h), (c) Bias (1 h) + non Bias (2 h) under the following conditions: Tf = 1920 °C, Ts = 850 °C, P = 20 torr, Vb = – 270 V, Ib = – 300 mA, CH4 = 1%), and (d) under the same aforementioned conditions except for the positive bias voltage (Vb = + 30 V) and current (Ib = + 300 mA).
New Phys.: Sae Mulli 2021;71:457~463 https://doi.org/10.3938/NPSM.71.457
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