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Fig. 2. (Color online) Schematic drawing of the growth process for the single crystal hexagonal Si microneedle by mixed-source HVPE method : (a) bare Si (111) growth substrate, (b) formation of nucleation on the Si (111) growth substrate, (c) and (d) initial growth of the Si microneedles, (e), (f), and (g) falling process on collection substrate for Si microneedles separated from the Si (111) substrate, (h), (i), and (j) optical images of processes corresponding to those of (b) and (g), respectively, for grown single crystal hexagonal Si microneedles.
New Phys.: Sae Mulli 2021;71:659~666