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Fig. 4. (Color online) Schematic drawing of the growth process for the Si micro single crystal by mixed-source HVPE method : (1) bare Si (111) growth substrate, (2) formation of seed on the Si (111) growth substrate, (3) and (4) growth of the Si micro single crystal. (b) XPS results of cross-sectional Si micro single crystal after sputtering etching.
New Phys.: Sae Mulli 2021;71:1018~1026 https://doi.org/10.3938/NPSM.71.1018
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