Table. 4.
Table 4
Electrical resistance of Bi-doped In
2
O
3
films deposited at various temperatures.
Deposition temperature
RT
100 °C
200 °C
300 °C
Resistance (× 10
10
Ω)
8.42
7.18
6.22
0.004
New Phys.: Sae Mulli 2022;72:734~741
https://doi.org/10.3938/NPSM.72.734
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