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Table. 1.

ALD recipe for SiO2 thin film using DIPAS as precursor and O3 as reactant.

Precursor Source Substrate Temperature (°C) Source dosing (s) Source exposure time (s) Source purging time (s) O3 dosing time (s) O3 exposure time (s) O3 purging time (s)
DIPAS 250 °C 0.5 2 25 1 6 25
150 °C
100 °C
New Phys.: Sae Mulli 2023;73:23~28 https://doi.org/10.3938/NPSM.73.23
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