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Fig. 4. (Color online) High resolution XPS spectra of O 1s electronic levels of the SiO2 thin film (a) 100 °C, 150 °C, and 250 °C deposition temperature and (b) fitted data of O 1s XPS spectra for 100 °C deposition temperature. The dotted red and green lines of the 532.6 eV and 533.4 eV binding energy indicate Si–O and Si–OH bond, respectively.
New Phys.: Sae Mulli 2023;73:23~28