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Fig. 4. (Color online) (a) Schematic diagram and (b) corresponding band diagram of TFSA-Gr/SiQDs:SiO2/n–Si/InGa photodetectors. (c) J-V curves under dark and illumination at photon wavelengths 600 nm for devices with/without h-BN. (d)–(e) Bias-dependent PC/DC ratios for devices without/with h-BN. (f) Spectral responsivity of TFSA-Gr/SiQDs:SiO2/n–Si devices without/with h-BN.
New Phys.: Sae Mulli 2023;73:647~651