Fig. 2. (Color online) Id-Vg and Ig-Vg curves of each AlGaN/GaN HFET with different u-GaN cap layer thicknesses(40, 20, and 10 nm). The inset shows the Id-Vg curves near the threshold voltage of each device.

New Phys.: Sae Mulli 2024;74:1239~1244 https://doi.org/10.3938/NPSM.74.1239

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