Fig. 3. (Color online) Id-Vd curves of the AlGaN/GaN HFET as a function of gate voltage variation for different thicknesses of the u-GaN cap layer: (a) 40 nm, (b) 20 nm, and (c) 10 nm.

New Phys.: Sae Mulli 2024;74:1239~1244 https://doi.org/10.3938/NPSM.74.1239

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