Fig. 4. The conductance Gg/ω as a function of radial frequency at each gate bias voltage and fitted curves for each AlGaN/GaN HFET with different u-GaN cap layer thicknesses ((a) 40 nm, (b) 20 nm, and (c) 10 nm), respectively.

New Phys.: Sae Mulli 2024;74:1239~1244 https://doi.org/10.3938/NPSM.74.1239

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