Fig. 1. (Color online) (a) J-V characteristics of hole-only device with HAT-CN (red line) and without HAT-CN (dotted gray line). The inset depicts the device structure and voltage direction, with holes injected from the ITO side. The organic active layers are 100 nm thick for NPB and 3 nm thick for HAT-CN. (b) temperature-dependent J-V characteristics of hole-only device with HAT-CN from 100 K to 300 K in 20 K intervals. (c) impedance magnitude (|Z|)-V, phase angle (arg(Z))-V, and capacitance (C)-V curves of the hole-only device with HAT-CN.
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