npsm 새물리 New Physics : Sae Mulli

pISSN 0374-4914 eISSN 2289-0041


Research Paper

New Phys.: Sae Mulli 2018; 68: 1183-1191

Published online November 30, 2018

Copyright © New Physics: Sae Mulli.

Optical Properties of Plasmons in a GaAs/Al$_x$Ga$_{1-x}$As Multiple Quantum Well Under Electric and Magnetic Fields

Hyung Soo AHN*1, Sang Chil LEE2, Suck Whan KIM†3

1 Department of Applied Physics, Korea Maritime University, Busan 49112, Korea
2 Faculty of Science Education, Jeju National University, Jeju 63243, Korea
3 Department of Physics, Andong National University, Andong 36729, Korea

Correspondence to:*, †

Received: September 11, 2018; Revised: October 1, 2018; Accepted: October 1, 2018

This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License ( which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.


The plasmon behaviors in a superlattice of GaAs/Al$_x$Ga$_{1-x}$As multiple quantum wells with a half-parabolic confining potential due to different dielectric interfaces are studied under magnetic and electric fields perpendicular and parallel to the superlattice axis by using a previously published theoretical framework. From the density-density correlation functions by considering the intrasubband and the inter-subband transitions under the random phase approximation, we calculate the dispersion energies of the surface and the bulk states as functions of the composition of the multiple quantum well structure and of the magnetic field strength and the average electric field strength over the quantum well. The Raman intensities for various magnetic field strengths and average electric field strengths over the quantum well are also obtained as a function of the energy of the incoming light for these states.

Keywords: GaAs/Al$_x$Ga$_{1-x}$As, Superlattice, Raman intensity, Plasmon, Dispersion relation, Random phase approximation, Density-density correlation function


Fig. 1. ħω versus Raman intensities for bulk and surface plasmons due to intrasubband transitions using γ =10-7 meV at qa = 2.0, x = 0.6, and F = 5 x 105 V/m under the same magnetic fields as those used for previous figures. The parameters have the same values as those stated in the caption of Fig.1.

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