Ex) Article Title, Author, Keywords
New Phys.: Sae Mulli 2019; 69: 46-50
Published online January 31, 2019 https://doi.org/10.3938/NPSM.69.46
Copyright © New Physics: Sae Mulli.
Aram YEOM1, Hong Seung KIM*1, Hyung Soo AHN1, Nak Won JANG2
This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
The replacement of Zn by Mg increases the bandgap of ZnO from 3.37 eV to 7.8 eV. The quantum-well structure of MgZnO/ZnO can be utilized as an active layer for ultra violet light-emitting diode (UV-LED) and high-mobility field effect transistor (HEMT). However, forming a high-quality MgZnO/ZnO heterostructure is difficult because of the lattice mismatch and surface roughness of the ZnO layer on a sapphire substrate. This study was carried out to introduce an InZnO buffer layer for the formation of a good-quality ZnMgO/ZnO quantum-well structure. Pulsed laser deposition (PLD) was used for this purpose, and X-ray diffraction (XRD) and transmission electron microscopy (TEM) were used to evaluate the structural properties. Atomic force microscopy (AFM) was also performed to observe surface changes. The addition of only a small amount of In improved the surface roughness of the buffer layers. This revealed that a buffer layer of InZnO is favorable for growing ZnMgO/ZnO thin films of high quality.
Keywords: ZnO, InZnO, ZnO/ZnMgO, Buffer layer, PLD