Ex) Article Title, Author, Keywords
New Phys.: Sae Mulli 2019; 69: 355-360
Published online April 30, 2019 https://doi.org/10.3938/NPSM.69.355
Copyright © New Physics: Sae Mulli.
Tae Jong HWANG1*, Dong Ho KIM2
1School of General Education, Yeungnam University, Gyeongsan 38541, Korea
This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Magnetic flux pinning of Nb thin films using semiconductor InAs nanorods as pinning centers was studied. The InAs nanorods were grown in a vertical orientation by using metalorganic chemical vapor deposition and the Nb thin films were deposited by sputtering. The specimens used for the measurement were a reference Nb thin film with no nanorods and Nb-InAs thin films with different thicknesses and embedded nanorods. The magnetic flux pinning effect of the nanorods at the upper critical field and the critical current density proved to be higher than that of the reference Nb thin film when the magnetic field was applied along the length of the nanorods. The effective flux pinning energies of the two Nb-InAs specimens showed similar magnetic field dependences, but were different from those of the Nb thin films. The angular dependence of the critical current densities of the two Nb-InAs specimens showed similar peak shapes in the vicinity of the perpendicular magnetic field direction on the substrate, but showed differences in the widths and the detailed forms of the peaks. This angular dependency was explained as being due to a change in the effective length of the flux lines pinned inside the nanorod.
Keywords: Flux pinning, InAs nanorods, Critical current density