npsm 새물리 New Physics : Sae Mulli

pISSN 0374-4914 eISSN 2289-0041
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Article

Research Paper

New Phys.: Sae Mulli 2019; 69: 369-375

Published online April 30, 2019 https://doi.org/10.3938/NPSM.69.369

Copyright © New Physics: Sae Mulli.

Characterization of MgZnO films depending on the deposition power of RF sputtering system

Joonyoung CHOI,  Jinyong KIM, Hyeona KIM, Ganghyeon PARK, Giseong LEE, Younjung JO*, Chang-Duk KIM

Department of Physics, Kyungpook National University, Daegu 41566, Korea

Correspondence to:duks@knu.ac.kr

Received: December 11, 2018; Revised: January 29, 2019; Accepted: February 11, 2019

This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The Dependence of the characteristics of MgZnO thin films deposited by using a RF sputtering system on the deposition power were investigated. A Mg$_{0.3}$Zn$_{0.7}$O target was used to deposit thin films at powers of 150 W, 200 W, 250 W, and 300 W. While the hexagonal (002) orientation in the X-ray diffractometry (XRD) patterns increases as the deposition power increases, the MgO (200) peak begins to appear and the MgZnO (002) peak sharply decreases at 300 W. X-ray photoelectron spectroscopy (XPS) measurements showed the binding energy of the Zn2$_{p3}$ peak to be is close to that of pure ZnO, which means an the improvement in the ZnO crystallinity with increasing deposition power. However, Hall measurements show that as the crystallinity improves, the oxygen vacancies, acting as electron donors, are reduced, as are the and electron concentration and mobility and the electrical conductivity.

Keywords: MgZnO, RF magnetron sputtering, X-ray photoelectron spectra, Oxygen vacancies

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